PART |
Description |
Maker |
B592-2T B593-2T B534E2T B634E2T B543E2T B512E2T B5 |
THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|240V V(RRM)|27A I(T) THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|280V V(RRM)|27A I(T) THYRISTOR MODULE|BRIDGE|HALF-CNTLD|440V V(RRM)|27A I(T) THYRISTOR MODULE|BRIDGE|HALF-CNTLD|440V V(RRM)|46A I(T) THYRISTOR MODULE|BRIDGE|FULLY-CNTLD|280V V(RRM)|27A I(T) THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|240V V(RRM)|27A I(T) THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CA|240V V(RRM)|27A I(T) THYRISTOR MODULE|BRIDGE|FULLY-CNTLD|240V V(RRM)|27A I(T) THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|240V V(RRM)|46A I(T) THYRISTOR MODULE|BRIDGE|HALF-CNTLD|240V V(RRM)|46A I(T) THYRISTOR MODULE|AC SWITCH|46A I(T) THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CA|240V V(RRM)|46A I(T) THYRISTOR MODULE|BRIDGE|HALF-CNTLD|240V V(RRM)|27A I(T) THYRISTOR MODULE|AC SWITCH|27A I(T) THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|120V V(RRM)|27A I(T) THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|440V V(RRM)|27A I(T) THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CA|440V V(RRM)|27A I(T) 晶闸管模块|桥|半CNTLD |加利福尼亚州| 440V五(无线资源管理)| 27A条疙(T THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|120V V(RRM)|27A I(T) 晶闸管模块|桥|半CNTLD |消委会| 120伏特五(无线资源管理)| 27A条疙(T THYRISTOR MODULE|BRIDGE|HALF-CNTLD|280V V(RRM)|27A I(T) 晶闸管模块|桥|半CNTLD | 280伏特五(无线资源管理)| 27A条疙(T THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|440V V(RRM)|46A I(T) 晶闸管模块|桥|半CNTLD |消委会| 440V五(无线资源管理)| 46A条疙(T
|
ITT, Corp. Crydom, Inc. Astrodyne, Inc. California Eastern Laboratories, Inc.
|
FDMS2572 FDMS257207 |
N-Channel UltraFET Trench? MOSFET 150V, 27A, 47m N-Channel UltraFET Trench㈢ MOSFET 150V, 27A, 47mз
|
FAIRCHILD[Fairchild Semiconductor]
|
HUFA76419P3 HUFA76419S3S HUFA76419S3ST |
29 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB 27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs 27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFETPower MOSFETs
|
FAIRCHILD SEMICONDUCTOR CORP FAIRCHILD[Fairchild Semiconductor]
|
UF540 UF540L-TA3-T UF540G-TA3-T |
27A, 100V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
HGTG12N60B3 |
27A, 600V, UFS Series N-Channel IGBTs
|
FAIRCHILD[Fairchild Semiconductor]
|
FSYA250R FSYA250D FSYA250R1 FN4313 FSYA250R4 FSYA2 |
27A, 200V, 0.100 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 27 A, 200 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET From old datasheet system 27A/ 200V/ 0.100 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
|
Intersil, Corp. INTERSIL[Intersil Corporation]
|
NKT26-16A NKT26A |
Thyristor/Diode and Thyristor/Thyristor, 27A(ADD-A-PAK Power Modules)
|
Nell Semiconductor Co., Ltd
|
APT8030 APT8030B2VFR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 800V 27A 0.300 Ohm
|
Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
|
IRG4PC50UD IRG4PC50UD-E |
55 A, 600 V, N-CHANNEL IGBT, TO-247AD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A) 600V UltraFast 8-60 kHz Copack IGBT in a TO-247AC package
|
IRF[International Rectifier]
|
IRFB18N50K |
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package HEXFET? Power MOSFET Power MOSFET(Vdss=500V, Rds(on)max=0.26ohm, Id=27A)
|
IRF[International Rectifier]
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